Mutigullin, I.V: search on Z-Library

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1

Ab initio investigation of the clustering of carbon adatoms on Fe(001) and Fe(111) surfaces

I. V. Mutigullin, D. I. Bazhanov

Journal:

Journal of Experimental and Theoretical Physics

Year:

2010

Language:

english

File:

PDF, 222 KB

english, 2010

2

Effect of coverage by carbon on the possibility of forming an interstitial solid solution in Fe(001) and Fe(111) subsurface layers

I. V. Mutigullin, D. I. Bazhanov, A. S. Ilyushin

Journal:

Physics of the Solid State

Year:

2011

Language:

english

File:

PDF, 409 KB

english, 2011

3

Computer simulation and experimental investigation of the crystal structure and electronic properties of InN/Si and GaN/Si thin films

Abgaryan, K. K., Bazhanov, D. I., Mikheev, S. Yu., Mutigullin, I. V., Ryzhov, Yu. A.

Journal:

Bulletin of the Russian Academy of Sciences: Physics

Year:

2012

Language:

english

File:

PDF, 511 KB

english, 2012

4

Ab initio study of macroscopic polarization of AlN, GaN and AlGaN

Supryadkina, Irina, Abgaryan, Karine, Bazhanov, Dmitry, Mutigullin, Ilya

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 356 KB

english, 2014

5

Study of the polarizations of (Al,Ga,AlGa)N nitride compounds and the charge density of various interfaces based on them

Supryadkina, I. A., Abgaryan, K. K., Bazhanov, D. I., Mutigullin, I. V.

Journal:

Year:

2013

Language:

english

File:

PDF, 199 KB

english, 2013

6

Impact of strain on the surface properties of transition metal carbide films: First-principles study

Bazhanov, D. I., Mutigullin, I. V., Knizhnik, A. A., Potapkin, B. V., Bagaturyants, A. A., Fonseca, L. R. C., Stoker, M. W.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 425 KB

english, 2010

7

Multiscale Computational Model of Nitride Semiconductor Nanostructures

Abgaryan, Karine, Mutigullin, Ilya, Bazhanov, Dmitriy

Journal:

Advanced Materials Research

Year:

2012

Language:

english

File:

PDF, 310 KB

english, 2012

8

Influence of the ab initio Calculation Parameters on Prediction of Energy of Point Defects in Silicon

Ganchenkova, M.G., Supriadkina, I.A., Abgaryan, K.K., Bazhanov, D.I., Mutigullin, I.V, Borodin, V.A.

Journal:

Modern Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

9

Theoretical investigation of the stability of defect complexes in silicon

Abgaryan, Karine, Mutigullin, Ilya

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 290 KB

english, 2016

10

Theoretical investigation of 2DEG concentration and mobility in the AlGaN/GaN heterostructures with various Al concentrations

Abgaryan, Karine, Mutigullin, Ilya, Reviznikov, Dmitry

Journal:

Physica status solidi

Year:

2015

Language:

english

File:

PDF, 401 KB

english, 2015

11

Computational model of 2DEG mobility in AlGaN/GaN heterostructures

Abgaryan, Karine, Mutigullin, Ilya, Reviznikov, Dmitry

Journal:

Physica status solidi

Year:

2015

Language:

english

File:

PDF, 474 KB

english, 2015

12

Theoretical investigation of the electronic and structural properties of AlN thin films

Abgaryan, K. K., Bazhanov, D. I., Mutigullin, I. V.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 188 KB

english, 2016